Customization: | Available |
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CAS No.: | 12067-57-1 |
Formula: | Ti5si3 |
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Features
Titanium silicide is widely used in the manufacture of gates, source/drain, interconnects and ohmic contacts for metal oxide semiconductors (MOS), metal oxide semiconductor field effect transistors (MOSFETs), and dynamic random memories (DRAMs): high purity, small particle size, uniform distribution, high specific surface area, high surface activity, and low bulk density.
CAS No.: | 12067-57-1 |
Molecular Formula: | Ti5Si3 |
Quality Standard: | 99.9% |
Minimum Order | Depends on your requirement |
Melting Point: | 2130ºC |
Molecular Weight: | 323.59100 |
Water Solubility | Soluble in HF. Insoluble in water. |
RIDADR | UN3178 |
Packaging Group | III |
Hazard Class | 4.1 |
EINECS | 235-082-9 |
Application
Titanium silicide is widely used in the manufacture of gates, source/drain, interconnects and ohmic contacts for metal oxide semiconductors (MOS), metal oxide semiconductor field effect transistors (MOSFETs), and dynamic random memories (DRAMs): high purity, small particle size, uniform distribution, high specific surface area, high surface activity, and low bulk density.
Do not put undiluted or large amounts of the product into contact with groundwater, waterways or sewage systems, and do not release the material into the surrounding environment without government permission.
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